Heinz Shih

Title: Heinz Shih: Innovator in Semiconductor Technology

Introduction

Heinz Shih is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of methods for forming gates in integrated circuits. His innovative approach has led to advancements that enhance the efficiency and performance of electronic devices.

Latest Patents

Heinz Shih holds a patent for a method for forming a gate. This method involves several steps, including the formation of a gate oxide layer, a polysilicon layer, and a barrier layer on a substrate with an isolation structure. A conductive layer is then created on the barrier layer through sputtering deposition using titanium silicide with low silicon content as a target. A rapid thermal process is performed to eliminate polymer nodules formed during deposition. An anti-reflection layer is subsequently formed on the conductive layer, and the layers are patterned using a specific etchant until the polysilicon layer is exposed. Finally, the exposed polysilicon layer and the underlying gate oxide layer are removed to create the gate.

Career Highlights

Heinz Shih is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work has been instrumental in advancing the technology used in modern electronics. His innovative methods have contributed to the efficiency and reliability of semiconductor devices.

Collaborations

Heinz has collaborated with notable colleagues, including L Y Chen and Wen-Yi Hsieh. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Heinz Shih is a key figure in the semiconductor industry, with a focus on innovative gate formation methods. His contributions continue to influence the development of advanced electronic devices.