This inventor holds 2 USPTO granted patents. Top assignees: Infineon Technologies Ag, Siemens Aktiengesellschaft. Active years: 2000.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2000
Title: Heinz Honigschmid: Innovator in Ferroelectric Memory Technology
Introduction
Heinz Honigschmid is a notable inventor based in Starnberg, Germany. He has made significant contributions to the field of memory technology, particularly in ferroelectric memory configurations. With a total of 2 patents, his work has advanced the understanding and application of memory systems in electronics.
Latest Patents
Honigschmid's latest patents include innovative designs for ferroelectric memory configurations. The first patent describes a memory configuration that comprises multiple memory cells, each featuring a ferroelectric storage capacitor and a selection transistor. This design allows for efficient addressing of memory cells via word lines and bit line pairs. A reference signal from a reference cell pair can be compared with a read signal from a memory cell in a sense amplifier, enhancing the performance of the memory system.
The second patent focuses on a method for preventing aging in memory cells within an integrated memory. This invention includes a cell array with bit lines, word lines, and writable memory cells. A differential sense amplifier reads and writes information to memory cells, utilizing a switching unit to interchange data lines during write access operations. This innovative approach helps maintain the integrity and longevity of memory cells.
Career Highlights
Throughout his career, Heinz Honigschmid has worked with prominent companies in the technology sector. He has been associated with Siemens Aktiengesellschaft and Infineon Technologies AG, where he contributed to various projects related to memory technology and electronic systems.
Collaborations
Honigschmid has collaborated with notable professionals in his field, including Georg Braun and Thomas Röhr. These partnerships have fostered innovation and development in memory technologies.
Conclusion
Heinz Honigschmid's contributions to ferroelectric memory technology have positioned him as a key figure in the field. His patents reflect a deep understanding of memory systems and their applications in modern electronics. His work continues to influence advancements in memory technology.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

