Company Filing History:
Years Active: 1977-1988
Title: The Innovative Contributions of Heinz Herzer
Introduction
Heinz Herzer is a notable inventor based in Burghausen, Germany. He has made significant contributions to the field of electronics, particularly in the production of silicon materials. With a total of six patents to his name, Herzer's work has had a lasting impact on the industry.
Latest Patents
Herzer's latest patents include a method for the manufacture of dislocation-free monocrystalline silicon. This innovative method describes a process for crucible-free zone pulling of silicon monocrystalline rods. According to the invention, a polycrystalline silicon rod obtained by crucible pulling according to the Czochralski procedure is used in lieu of the polycrystalline silicon rod produced by vapor deposition. Another significant patent is a process for decreasing crystal damages in the production of n-doped silicon by neutron bombardment. In this process, phosphorus atoms are formed from silicon by nuclear transmutation, allowing for precise calculations of the desired phosphorus atoms per cc.
Career Highlights
Herzer is currently associated with Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, where he continues to innovate and develop new technologies. His work has been instrumental in advancing the production techniques of silicon materials, which are crucial for various electronic applications.
Collaborations
Heinz Herzer has collaborated with notable colleagues in his field, including Dietrich Schmidt and Helmut Zauhar. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.
Conclusion
Heinz Herzer's contributions to the field of silicon production and electronics are commendable. His innovative patents and collaborative efforts continue to influence the industry positively.