Heguang Li

Title: Innovations by Heguang Li: Pioneering Storage Device Technologies

Introduction

Heguang Li is an accomplished inventor based in Newark, CA, with a focus on innovative storage device technologies. He holds a total of 3 patents, showcasing his contributions to the field of non-volatile memory and NAND technology. His work has significantly advanced the efficiency and reliability of storage devices.

Latest Patents

One of Heguang Li's latest patents is titled "Dual-way sensing scheme for better neighboring word-line interference." This patent describes a storage device that includes a non-volatile memory with a block of N wordlines partitioned into multiple sub-blocks. The control circuitry in this device is designed to perform program and sensing operations in both normal and reverse order sequences, enhancing the performance of the memory.

Another notable patent is "NAND early erase termination based on leakage current test." This technology addresses the challenges of erase disturb in NAND memory cells by allowing multiple erase blocks to be erased in parallel. The method includes testing for leakage current during the erase process, ensuring that only those blocks that pass the test continue with the erase procedure, thereby preventing potential issues.

Career Highlights

Heguang Li is currently employed at Sandisk Technologies Inc., where he continues to innovate in the field of storage technology. His work has been instrumental in developing solutions that improve the performance and reliability of memory devices.

Collaborations

Heguang has collaborated with talented coworkers such as Yuanyuan Wu and Xiaochen Zhu, contributing to a dynamic team focused on advancing storage technologies.

Conclusion

Heguang Li's contributions to the field of storage devices through his innovative patents demonstrate his expertise and commitment to enhancing memory technology. His work continues to influence the industry and pave the way for future advancements.