Suwon-si, South Korea

Heewon Min

This inventor holds 2 USPTO granted patents. Top assignee: Samsung Electronics Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Heewon Min. Retrieved from https://idiyas.com/inventor/heewon-min-ftuvrvtm

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 50.0

Average Co-Inventor Count = 10.0

ph-index = 1


Company Filing History:


Years Active: 2026

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2 patents (USPTO):Explore Patents

Title: Heewon Min: Innovator in Substrate Processing Technology

Introduction

Heewon Min is a notable inventor based in Suwon-si, South Korea. She has made significant contributions to the field of substrate processing technology. Her innovative work has led to the development of a unique apparatus that enhances substrate processing efficiency.

Latest Patents

Heewon Min holds a patent for a substrate processing apparatus. This apparatus features an O-ring defined by a central axis, a first guide ring located closer to the central axis than the O-ring, and a second guide ring positioned further from the central axis than the O-ring. The design ensures that the thickness of each guide ring progressively increases as it moves away from the central axis, optimizing the processing capabilities.

Career Highlights

Heewon Min is currently employed at Samsung Electronics Ltd., a leading company in the technology sector. Her role at Samsung has allowed her to work on cutting-edge projects that push the boundaries of substrate processing technology.

Collaborations

Heewon collaborates with talented coworkers, including Yirop Kim and Junghyun Song. Their teamwork fosters an environment of innovation and creativity, contributing to the advancement of their projects.

Conclusion

Heewon Min's contributions to substrate processing technology exemplify her dedication to innovation. Her patent and work at Samsung Electronics Ltd. highlight her role as a key player in the field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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