Hee K Park

Title: Hee K Park: Innovator in CMOS Integrated Circuit Technology

Introduction

Hee K Park is a notable inventor based in Portland, OR (US). He has made significant contributions to the field of integrated circuit technology. His innovative work focuses on improving the manufacturing processes of CMOS integrated circuits.

Latest Patents

Hee K Park holds a patent for a process for manufacturing MOS integrated circuits with an improved method. This patent describes a CMOS integrated circuit composed of complementary insulated gate field effect transistors. The design incorporates isolation trenches formed by a combination of thermal growth of silicon dioxide and chemical vapor deposition of polycrystalline silicon to prevent air gaps. Matching the thermal coefficient of expansion of the trench with that of the substrate minimizes pn junction leakage currents and positive feedback latch-up operation. To reduce the ohmic contact resistance and interconnect resistance of the transistor elements, refractory metal silicide areas of low sheet resistance are contacted with the source, drain, and gate elements. The manufacturing process also employs vertical walls of silicon nitride to prevent the formation of 'birds' beak' portions of increased thickness in the silicon dioxide layer of each transistor, which could degrade the high-frequency performance of the device. He has 1 patent to his name.

Career Highlights

Hee K Park is currently employed at Tektronix, Inc., where he continues to advance his research and development efforts. His work has been instrumental in enhancing the performance and reliability of integrated circuits.

Collaborations

He has collaborated with Tadanori Yamaguchi, who is also a talented professional in the field. Their partnership has contributed to the success of various projects within the company.

Conclusion

Hee K Park's innovative contributions to CMOS integrated circuit technology demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient and reliable electronic devices.