This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Industrial Technology Research Institute. Active years: 2025.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2025
Title: Haw-Tyng Huang: Innovator in All-Oxide Transistor Technology
Introduction
Haw-Tyng Huang is a prominent inventor based in Taipei, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative work on all-oxide transistor structures.
Latest Patents
Haw-Tyng Huang holds a patent for an all-oxide transistor structure, which includes a method for fabricating the same and a display panel comprising the structure. This invention features a substrate with an upper surface and a first transistor positioned on it. The first transistor consists of a first drain, a first dielectric layer, a first source, at least one first opening, and a first channel layer. The arrangement of these components is designed to enhance the performance and efficiency of electronic devices.
Career Highlights
Haw-Tyng Huang is affiliated with the Industrial Technology Research Institute, where he has been instrumental in advancing research and development in semiconductor technologies. His work has garnered attention for its potential applications in various electronic devices.
Collaborations
Haw-Tyng Huang has collaborated with notable colleagues, including Po-Chun Yeh and Hsien-Yi Liao, contributing to a dynamic research environment that fosters innovation.
Conclusion
Haw-Tyng Huang's contributions to the field of all-oxide transistors exemplify the impact of innovative thinking in technology. His work continues to influence the development of advanced electronic components.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile