This inventor holds 1 USPTO granted patent. Top assignee: Oki Electric Industry Co., Ltd.. Active years: 2002.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2002
Title: Hatsumi Ito - Innovator in Semiconductor Manufacturing
Introduction
Hatsumi Ito is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of semiconductor manufacturing. Her innovative methods have paved the way for advancements in technology.
Latest Patents
Hatsumi Ito holds 1 patent for her invention titled "Method of making a semiconductor device." This patent describes a process that utilizes shallow trench isolation (STI) techniques. The method involves depositing a Si3N4 film through a chemical vapor deposition (CVD) process and polishing a CVD oxide film using chemical mechanical polishing (CMP). Additionally, it includes steps for planarizing a rough silicon substrate surface and etching back the organic spin-on-glass (SOG) film and CVD oxide film buried in the trench.
Career Highlights
Hatsumi Ito has built a successful career at Oki Electric Industry Co., Ltd. Her work has been instrumental in enhancing semiconductor device manufacturing processes. She is recognized for her technical expertise and innovative approach to problem-solving.
Collaborations
Hatsumi collaborates with Nobuo Ozawa, who is also a talented professional in the field. Their partnership has led to fruitful developments in semiconductor technology.
Conclusion
Hatsumi Ito's contributions to semiconductor manufacturing exemplify her innovative spirit and dedication to advancing technology. Her patent and collaborative efforts continue to influence the industry positively.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile