The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2002
Filed:
Jan. 06, 2000
Applicant:
Inventors:
Nobuo Ozawa, Tokyo, JP;
Hatsumi Ito, Tokyo, JP;
Assignee:
Oki Electric Industry Co., Ltd., Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/1302 ;
U.S. Cl.
CPC ...
H01L 2/1302 ;
Abstract
A method of manufacturing a semiconductor device using a shallow trench isolation (STI) process comprises the steps of depositing a Si3N4 film ( ) by a chemical vapor deposition (CVD) process, polishing a CVD oxide film ( ) by a chemical mechanical polishing (CMP). The method further comprises the steps of planarizing with an organic spin-on-glass (SOG) film ( ) a rough surface of the silicon substrate resulting from a pattern dependency of polished amounts in the CMP process and etching back evenly the organic SOG film ( ) and the CVD oxide film ( ) buried in the trench at an etching selectivity ratio of 1.