Tokyo, Japan

Haruka Matsubara

This inventor holds 1 USPTO granted patent and 2 published patent applications and 2 EPO patents. Top assignees: Koha Co., Ltd., Tamura Corporation. Active years: 2020.

USPTO Granted Patents = 1 

% Patents Active = 100.0

 

Average Co-Inventor Count = 5.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Haruka Matsubara: Innovator in Crystal Growth Technology

Introduction

Haruka Matsubara is a prominent inventor based in Tokyo, Japan. She has made significant contributions to the field of materials science, particularly in the growth of single crystals. Her innovative methods have the potential to advance various technological applications.

Latest Patents

Matsubara holds a patent for a "Method for growing β-GaO-based single crystal." This patent provides a technique for growing a β-GaO-based single crystal with minimal variation in crystal structure and high quality in the b-axis direction. The method involves growing a plate-shaped Sn-doped β-GaO-based single crystal using a seed crystal, which enhances the quality of the resulting material.

Career Highlights

Throughout her career, Haruka Matsubara has worked with notable companies, including Koha Co., Ltd. and Tamura Corporation. Her experience in these organizations has allowed her to refine her skills and contribute to advancements in crystal growth technology.

Collaborations

Matsubara has collaborated with esteemed colleagues such as Shinya Watanabe and Kazuyuki Iizuka. These partnerships have fostered a collaborative environment that encourages innovation and the sharing of ideas.

Conclusion

Haruka Matsubara's work in the field of crystal growth technology exemplifies her dedication to innovation. Her contributions continue to influence advancements in materials science and technology.

Profile summary based on public USPTO records.
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