The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 07, 2020
Filed:
Mar. 31, 2014
Applicants:
Tamura Corporation, Nerima-ku, Tokyo, JP;
Koha Co., Ltd., Nerima-ku, Tokyo, JP;
Inventors:
Shinya Watanabe, Tokyo, JP;
Kazuyuki Iizuka, Tokyo, JP;
Kei Doioka, Tokyo, JP;
Haruka Matsubara, Tokyo, JP;
Takekazu Masui, Tokyo, JP;
Assignees:
KOHA CO., LTD., Nerima-ku, Tokyo, JP;
TAMURA CORPORATION, Nerima-ku, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 15/34 (2006.01); C30B 29/16 (2006.01); C30B 15/04 (2006.01);
U.S. Cl.
CPC ...
C30B 15/34 (2013.01); C30B 15/04 (2013.01); C30B 29/16 (2013.01);
Abstract
Provided is a method for growing a β-GaO-based single crystal, whereby it becomes possible to grow a β-GaO-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a β-GaO-based single crystal includes growing a plate-shaped Sn doped β-GaO-based single crystal in the direction of the b axis using a seed crystal.