This inventor holds 2 USPTO granted patents. Top assignee: Nec Corporation. Active years: 2007-2009.
Company Filing History:
Years Active: 2007-2009
Title: Haruihiko Ono: Innovator in MOS Semiconductor Technology
Introduction
Haruihiko Ono is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly in the development of MOS (Metal-Oxide-Semiconductor) devices. With a total of 2 patents to his name, Ono's work has had a substantial impact on the efficiency and performance of electronic components.
Latest Patents
Ono's latest patents focus on advanced MOS semiconductor devices. One of his notable inventions is a MOS semiconductor device isolated by a device isolation film. This device features a p-channel MOS field effect transistor with a source/drain region that has a length of no more than 1 micrometer and a gate length of no more than 0.2 micrometers. Additionally, the n-channel MOS field effect transistor is designed to optimize the relationship between the source/drain region and the device isolation film, enhancing overall performance.
Another significant patent involves a MOS semiconductor device that applies compressive strain in the channel direction to the p-channel MOS field effect transistor while applying tensile strain to the n-channel counterpart. This innovative approach aims to increase the current flow in both types of transistors, thereby improving the efficiency of the device.
Career Highlights
Haruihiko Ono is currently employed at NEC Corporation, a leading technology company known for its advancements in information technology and electronics. His work at NEC has allowed him to collaborate with other talented professionals in the field, further enhancing his contributions to semiconductor technology.
Collaborations
Ono has worked closely with his coworker, Akio Toda, on various projects related to semiconductor innovations. Their collaboration has led to the development of cutting-edge technologies that push the boundaries of what is possible in the field.
Conclusion
Haruihiko Ono's contributions to MOS semiconductor technology exemplify the spirit of innovation in the electronics industry. His patents reflect a deep understanding of semiconductor design and a commitment to advancing technology for better performance.