The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 27, 2009
Filed:
Mar. 23, 2006
Akio Toda, Tokyo, JP;
Haruihiko Ono, Tokyo, JP;
Akio Toda, Tokyo, JP;
Haruihiko Ono, Tokyo, JP;
NEC Corporation, Tokyo, JP;
Abstract
A MOS semiconductor device isolated by a trench device isolation region includes a p-channel MOS field effect transistor having a source/drain region with a length in the channel direction that is not more than 1 micrometer, and a gate length that is not more than 0.2 micrometers. The n-channel MOS field effect transistor is designed so that a face of the sourced/drain region in parallel to the gate width direction is adjacent to the device isolation film with the inserted silicon nitride film, and a face of the source/drain region parallel to the gate length direction is adjacent to the device isolation film including the silicon oxide film only.