Harshil Kashyap

Title: Harshil Kashyap: Innovator in Atomic Layer Deposition Technology

Introduction

Harshil Kashyap is a notable inventor based in San Diego, CA. He has made significant contributions to the field of materials science, particularly in the development of advanced oxide films. His innovative work has led to the granting of a patent that showcases his expertise in atomic layer deposition processes.

Latest Patents

Harshil Kashyap holds a patent for "Ultra high-k hafnium oxide and hafnium zirconium oxide films." This patent describes a method for performing an atomic layer deposition process to form a silicon doped oxide film on a substrate's surface. The oxide film may consist of hafnium-zirconium oxide or zirconium oxide. The atomic layer deposition process includes forming the oxide layers and a silicon layer using hydrogen peroxide as one of the precursors in the formation of the oxide layers. He has 1 patent to his name.

Career Highlights

Throughout his career, Harshil has worked with prominent organizations, including Applied Materials, Inc. and the University of California. His experience in these institutions has allowed him to refine his skills and contribute to groundbreaking research in the field of materials science.

Collaborations

Some of Harshil's notable coworkers include Andrew C. Kummel and Ajay Kumar Yadav. Their collaborative efforts have further advanced the research and development of innovative materials.

Conclusion

Harshil Kashyap's contributions to atomic layer deposition technology and his innovative patent demonstrate his commitment to advancing materials science. His work continues to influence the field and inspire future innovations.