The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 20, 2025
Filed:
Mar. 09, 2023
Applied Materials, Inc., Santa Clara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Harshil Kashyap, San Diego, CA (US);
Andrew C. Kummel, San Diego, CA (US);
Ajay Kumar Yadav, Santa Clara, CA (US);
Keith T. Wong, Mountain View, CA (US);
Srinivas Nemani, Saratoga, CA (US);
Ellie Yieh, San Jose, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Described herein is a method for performing an atomic layer deposition process to form a silicon doped oxide film on a surface of the substrate. The oxide film may be a hafnium-zirconium oxide film, or a zirconium oxide film. The atomic layer deposition process may include forming the oxide layers and a silicon layer using a hydrogen peroxide as at least one of the precursors used in formation of the oxide layers.