Harry Laun

Title: Innovations by Harry Laun in Non-Volatile Memory Arrays

Introduction

Harry Laun is an accomplished inventor based in Saratoga, California. He has made significant contributions to the field of semiconductor technology, particularly in the development of non-volatile memory arrays. His innovative work has led to the creation of a patented method and structure that enhances the performance and efficiency of integrated circuit devices.

Latest Patents

Harry Laun holds a patent for a "Method and structure for fabricating non-volatile memory arrays," specifically an MONOS integrated circuit device. This device features a semiconductor substrate made of silicon-bearing material, with a shallow trench isolation region formed within it. The design includes a P-type well region adjacent to the isolation region, along with a first word gate and a second word gate, each equipped with control gates. The device also incorporates a common buried bit line and an HDP plasma dielectric, which contributes to its advanced functionality.

Career Highlights

Laun's career is marked by his role at Winbond Electronics Corporation, where he has been instrumental in advancing semiconductor technologies. His expertise in fabricating non-volatile memory arrays has positioned him as a key player in the industry. With a focus on innovation, he continues to push the boundaries of what is possible in integrated circuit design.

Collaborations

Throughout his career, Harry Laun has collaborated with notable colleagues, including Kenlin Huang and J C Young. These partnerships have fostered a creative environment that encourages the exchange of ideas and the development of cutting-edge technologies.

Conclusion

Harry Laun's contributions to the field of semiconductor technology, particularly through his patented innovations, have had a lasting impact on the industry. His work exemplifies the spirit of innovation that drives advancements in integrated circuit devices.