Harry H L Liu

Title: The Innovative Mind of Harry H L Liu

Introduction

Harry H L Liu, a distinguished inventor based in Maple Grove, MN, has made significant contributions to the field of memory technology. With a portfolio of five patents, Liu embodies the spirit of innovation, particularly in areas focusing on radiation-hardened memory elements and static random access memory (SRAM) designs. His work continues to impact the industry as he remains a key figure at Honeywell International Inc.

Latest Patents

Liu's latest patents showcase his innovative approach to enhancing memory device reliability. One such patent is the "Radiation-hardened memory element with multiple delay elements." This memory element features at least two delay elements to maintain its radiation hardness, specifically designed as an SRAM cell. The architecture allows for series coupling of delays, ensuring that if one fails, the overall function of the SRAM cell remains intact. Liu cleverly positions the critical areas of the delays to prevent common line of sight with the circuit node, bolstering the element’s resilience against radiation.

Another significant patent is the "SRAM split write control for a delay element." This design introduces a split write control mechanism within SRAM structures. Each memory cell incorporates a dedicated delay linked to its write-word line. During inactive periods, the delay receives a signal that enhances the cell's response time. However, when a memory cell is engaged in a write operation, a bypass signal reduces the response time, thus optimizing performance.

Career Highlights

Harry H L Liu has been instrumental in advancing memory technologies at Honeywell International Inc. His commitment to pushing technological boundaries illustrates his dedication to innovation and excellence. Over the years, Liu has accumulated a rich background in engineering and product development, propelling his career and the advancements in memory technologies.

Collaborations

Throughout his career, Liu has collaborated with talented individuals such as Michael S Liu and Keith W Golke, further enriching his experience and fostering a collaborative spirit. These partnerships have not only cultivated a creative environment but have also contributed to groundbreaking advancements in their joint projects.

Conclusion

In conclusion, Harry H L Liu exemplifies the qualities of a pioneering inventor whose contributions to memory technology have made a lasting impact. With five patents that address critical design challenges in handling radiation and enhancing SRAM efficiency, Liu continues to be a vital part of the innovation landscape at Honeywell International Inc. His work serves as a testament to the importance of ingenuity in technology and the relentless pursuit of advancement in the field.