The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 22, 2008

Filed:

Jan. 05, 2005
Applicants:

Harry H. L. Liu, Plymouth, MN (US);

Keith W. Golke, Minneapolis, MN (US);

Eric E. Vogt, Minneapolis, MN (US);

Michael S. Liu, Bloomington, MN (US);

Inventors:

Harry H. L. Liu, Plymouth, MN (US);

Keith W. Golke, Minneapolis, MN (US);

Eric E. Vogt, Minneapolis, MN (US);

Michael S. Liu, Bloomington, MN (US);

Assignee:

Honeywell Internatinal Inc., Morristown, NJ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 17/50 (2006.01); G06G 7/62 (2006.01);
U.S. Cl.
CPC ...
Abstract

Behaviors of a transistor during a dose rate event can be modeled using a circuit simulation software package. A subcircuit model replaces a transistor in a circuit design to be simulated. The subcircuit model can be in the form of a schematic-based representation or a netlist. The subcircuit model provides a model of a source junction and a drain junction in the transistor during the dose rate event. The subcircuit model also includes the size of the transistor being replaced and the dose rate of the dose rate event. Once the transistor is replaced with the subcircuit model, a dose rate simulation may be performed to determine the dose rate hardness of the circuit design.


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