Scottsdale, AZ, United States of America

Harrison B Haver

This inventor holds 1 USPTO granted patent. Top assignee: Motorola Corporation. Active years: 1996.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harrison B Haver. Retrieved from https://idiyas.com/inventor/harrison-b-haver

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 2.0

ph-index = 1

Forward Citations = 17(Granted Patents)


Company Filing History:


Years Active: 1996

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1 patent (USPTO):Explore Patents

Title: Innovations of Harrison B Haver

Introduction

Harrison B Haver is a notable inventor based in Scottsdale, AZ (US). He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor device that enhances performance and efficiency.

Latest Patents

Haver holds a patent for a semiconductor device having an emitter terminal separated from a base. This device features an insulating layer overlying a semiconductor substrate. The insulating layer includes an aperture that allows for the integration of conductive terminals, separated by a composite dielectric layer. This innovative design improves the functionality of semiconductor devices.

Career Highlights

Harrison B Haver has had a distinguished career, primarily working with Motorola Corporation. His expertise in semiconductor technology has positioned him as a key player in the industry. Haver's contributions have been instrumental in advancing the capabilities of electronic devices.

Collaborations

Haver has collaborated with various professionals in his field, including his coworker Mark D Griswold. Their joint efforts have led to advancements in semiconductor technology and have fostered innovation within their organization.

Conclusion

Harrison B Haver's work exemplifies the spirit of innovation in the semiconductor industry. His patent and contributions continue to influence the development of advanced electronic devices.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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