Portland, OR, United States of America

Harmeet Sobti

This inventor holds 1 USPTO granted patent. Top assignee: Maxim Integrated Products, Inc.. Active years: 2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harmeet Sobti. Retrieved from https://idiyas.com/inventor/harmeet-sobti-pu66rnt2

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 3(Granted Patents)


Company Filing History:


Years Active: 2015

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1 patent (USPTO):Explore Patents

Title: Harmeet Sobti: Innovator in Semiconductor Technology

Introduction: Harmeet Sobti is a prominent inventor based in Portland, OR, with a significant contribution to the field of semiconductor technology. He holds a patent for his innovative work that enhances the performance and efficiency of semiconductor devices through a unique dual-gate configuration.

Latest Patents: Sobti's key patent, titled "Dual-gate VDMOS device," outlines a novel semiconductor design that incorporates a dual-gate setup. The invention describes a substrate featuring a first surface and a second surface, with two body regions formed near the first surface, each containing a source region. Additionally, it includes a drain region near the second surface and an epitaxial region that serves as a drift region between the drain and source regions. The dual-gate is strategically placed over the first surface, comprising a first and a second gate region that create a gap, which effectively reduces the gate-to-drain capacitance, thereby enhancing the device's performance.

Career Highlights: Harmeet Sobti is currently affiliated with Maxim Integrated Products, Inc., a leading company in the design and manufacturing of analog and mixed-signal semiconductor products. His work at Maxim Integrated Products underscores his commitment to advancing semiconductor technology.

Collaborations: Throughout his career, Sobti has worked alongside notable industry professionals, including Timothy K McGuire and David Snyder. Their collaborative efforts contribute to the continued innovation and development in the semiconductor sector.

Conclusion: Harmeet Sobti's contributions to the field of semiconductor technology through his patent on the dual-gate VDMOS device exemplify his role as an innovator. By effectively addressing challenges in semiconductor design, Sobti is helping to pave the way for future advancements in the industry. His affiliation with Maxim Integrated Products further highlights his expertise and commitment to innovation in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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