Bengaluru, India

Hareesh Chandrasekar

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Indian Institute of Science. Active years: 2020.

USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2020

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1 patent (USPTO):Explore Patents

Title: Innovations by Hareesh Chandrasekar

Introduction

Hareesh Chandrasekar is a notable inventor based in Bengaluru, India. He has made significant contributions to the field of semiconductor devices through his innovative work. His research focuses on the development of metal nitride platforms that enhance the performance of electronic devices.

Latest Patents

Hareesh holds 1 patent for his invention titled "Platform of large metal nitride islands with lateral orientations and low-defect density." This invention provides a metal nitride platform for semiconductor devices, featuring a pre-defined array of catalyst sites on a substrate. The metal nitride islands are designed with lateral to vertical size ratios greater than one, ensuring reduced dislocation densities and improved structural integrity. This platform is essential for building electrically and optically active devices, and it includes a process for preparing the metal nitride platform under specific reaction conditions.

Career Highlights

Hareesh is affiliated with the Indian Institute of Science, where he conducts his research and development activities. His work has garnered attention for its potential applications in advanced semiconductor technologies.

Collaborations

Hareesh collaborates with esteemed colleagues such as Dhayalan Shakthivel and Srinivasan Raghavan, contributing to a dynamic research environment that fosters innovation.

Conclusion

Hareesh Chandrasekar's contributions to semiconductor technology through his innovative patent demonstrate his commitment to advancing the field. His work not only enhances device performance but also paves the way for future innovations in electronics.

Profile summary based on public USPTO records.
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