Graz, Austria

Harald Okorn-Schmidt

This inventor holds 1 USPTO granted patent and 2 published patent applications. Top assignee: Lam Research Salzburg Gmbh. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Harald Okorn-Schmidt. Retrieved from https://idiyas.com/inventor/harald-okorn-schmidt-w45bl8gu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 1 

% Patents Active = 100.0

Average Co-Inventor Count = 3.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Harald Okorn-Schmidt: Patent Inventor in Process-Gas Distribution.

Introduction

Harald Okorn-Schmidt is an inventor associated with Graz, Austria, and Lam Research Salzburg GmbH. His patent work concerns equipment for distributing process gas during substrate treatment.

Latest Patents

The provided information lists 1 patent for Okorn-Schmidt: “Distribution body for distributing a process gas for treating a substrate by means of the process gas.” The invention describes a distribution plate with a gas inlet channel, gas distribution channels, and gas extraction channels. The distribution channels direct process gas toward the substrate, while the extraction channels carry gas away. The disclosure also relates to a deposition system and a method for distributing process gas relative to a substrate.

Career Highlights

Okorn-Schmidt’s listed patent reflects work on process-gas delivery and extraction in substrate-treatment systems. The provided information associates him with Lam Research Salzburg GmbH.

Collaborations

The supplied data names Andreas Gleissner and Marianne Kolitsch-Mataln as coworkers. It does not specify their roles in the patent or describe any direct collaboration with Okorn-Schmidt.

Conclusion

Harald Okorn-Schmidt’s listed invention focuses on a distribution body designed to manage process-gas flow during substrate treatment, connecting his patent record with semiconductor-processing technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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