Munchen, Germany

Harald Gossner


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 20(Granted Patents)


Location History:

  • Munich, DE (1996)
  • Munchen, DE (1998 - 2000)

Company Filing History:


Years Active: 1996-2000

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3 patents (USPTO):Explore Patents

Title: Innovations by Harald Gossner in SRAM Technology

Introduction

Harald Gossner, an accomplished inventor based in Munich, Germany, has made significant contributions to the field of microelectronics. With a focus on memory cell technology, he holds three patents that showcase his expertise and innovative thinking. As a member of Siemens Aktiengesellschaft, Gossner continues to drive advancements in the industry.

Latest Patents

One of Gossner's notable inventions is the SRAM memory cell. This three-transistor SRAM memory cell features a bistable field-effect transistor equipped with a fully depleted floating channel region and a hysteretic gate voltage characteristic curve. The design allows for the bistable field-effect transistor to connect to a first bit line for writing data and a second channel terminal linked to a second bit line for reading from the memory cell. Remarkably, the two bit lines can be identical, enhancing the efficiency of the memory system. Additionally, Gossner has patents related to microelectronic components and processes for their production, further solidifying his reputation as an innovator in the field.

Career Highlights

Gossner's career is highlighted by his role at Siemens Aktiengesellschaft, a leading multinational corporation known for its engineering and technology solutions. His inventive work in SRAM technology demonstrates his ability to blend theoretical knowledge with practical applications, making substantial impacts in microelectronics.

Collaborations

Throughout his career, Gossner has collaborated with esteemed colleagues, including Ignaz Eisele and Lothar Risch. These collaborations have facilitated the exchange of ideas and expertise, further fueling innovation within the teams they form as part of Siemens.

Conclusion

Harald Gossner stands out as a prominent figure in the world of microelectronics, particularly within SRAM technology. His patents reflect a commitment to advancing memory cell innovation, and his collaborations with talented coworkers demonstrate the power of teamwork in driving technological progress. As he continues to develop groundbreaking solutions at Siemens, Gossner's contributions are sure to leave a lasting impact on the industry.

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