Siemens Aktiengesellschaft

Harald Gossner

Ignaz Eisele

Lothar Risch

Erwin Hammerl

Franz Wittmann

Rao Ramgopal

Hermann Baumgaertner

A three-transistor SRAM memory cell includes a bistable field-effect transistor having a fully depleted floating channel region and a hysteretic gate voltage characteristic curve. The bistable field-effect transistor has a gate to be connected to a first bit line for the purpose of writing to the memory cell and a second channel terminal to be connected to a second bit line for the purpose of reading from the memory cell. The two bit lines can be identical. The connection between the bit lines and the bistable transistor can be effected through first and second respective transistors which are each controlled by a respective word line.

SRAM memory cell

Microelectronic component and process for its production

A method for manufacturing an electrically conductive tip for field emission cathodes of vacuum electronic components includes forming the tip of doped silicon by molecular beam epitaxy of doped silicon through an opening of a mask and onto a substrate of monocrystalline silicon. The molecular beam epitaxy also produces a doped silicon layer on the surface of the mask.

Method for manufacturing a micro-electronic component having an

Growing community of inventors

Munchen, Germany

Harald Gossner