Haoran Fang

Title: Haoran Fang - Innovator in FET Technology

Introduction

Haoran Fang is a notable inventor based in Zhejiang, China. He has made significant contributions to the field of field-effect transistors (FETs). His innovative work has led to the development of a unique FET with a multi-value switching function.

Latest Patents

Haoran Fang holds 1 patent for his invention titled "FET with Multi-Value Switching Function." This patent describes a FET that comprises a source region, a channel region, a drain region, a gate dielectric layer, a substrate layer, a gate-oxide inducer layer, a metal layer, and a spacer layer. The channel region is an undoped channel region, while the drain region is an undoped drain region. The metal layer consists of first to third metal blocks arranged at intervals from left to right. The distance between the first and second metal blocks is 12 nm, and the distance between the second and third metal blocks is 10 nm. The first metal block serves as the main control gate of the FET, while the second and third metal blocks act as inducer gates. The spacer layer isolates the first metal block from the other two.

Career Highlights

Haoran Fang is affiliated with Wenzhou University, where he continues to advance his research in semiconductor technology. His work has garnered attention for its potential applications in various electronic devices.

Collaborations

Haoran Fang has collaborated with notable colleagues, including Hao Ye and Pengjun Wang. Their combined expertise contributes to the innovative research environment at Wenzhou University.

Conclusion

Haoran Fang's contributions to FET technology exemplify the spirit of innovation in the field of electronics. His patent for a multi-value switching function FET showcases his commitment to advancing technology.