Hefei, China

Haofan Shi

This inventor holds 1 USPTO granted patent. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2024.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Haofan Shi. Retrieved from https://idiyas.com/inventor/haofan-shi

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 4.0

ph-index = 1


Company Filing History:


Years Active: 2024

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1 patent (USPTO):Explore Patents

Title: Haofan Shi: Innovator in Semiconductor Technology

Introduction

Haofan Shi is a prominent inventor based in Hefei, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor structure and chip.

Latest Patents

Haofan Shi holds 1 patent for his invention related to semiconductor structures. The patent describes a semiconductor structure that includes a first active area and a second active area extending along a first direction. These areas have a first width in a second direction. The invention also features a first WordLine (WL) drive transistor group, a second WL drive transistor group, a third WL drive transistor group, and a fourth WL drive transistor group, each with gate dielectric areas connected to the active areas.

Career Highlights

Haofan Shi is currently employed at Changxin Memory Technologies, Inc. His role at the company allows him to further explore and develop his innovative ideas in semiconductor technology. His work has positioned him as a key player in the industry.

Collaborations

Some of Haofan Shi's coworkers include Sang Pil Park and Jaeyong Cha. Their collaboration contributes to the advancement of technology within their field.

Conclusion

Haofan Shi's contributions to semiconductor technology exemplify the spirit of innovation. His patent and work at Changxin Memory Technologies, Inc. highlight his commitment to advancing the industry.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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