Hao Pu

Title: Hao Pu: Innovator in Memory Technology

Introduction

Hao Pu is a distinguished inventor based in Shanghai, China, known for his contributions to memory technology. With a total of two patents to his name, he has made significant advancements in the field of high-performance memory systems.

Latest Patents

Hao Pu's latest patents include a multi-port high-performance memory structure. This innovative design features a multi-port memory that incorporates a multiple transistor bitcell with a single-ended read port and a write port. Additionally, it includes a read circuit connected to the multiple transistor bitcell circuit, which is configured to evaluate the single-ended read port. A timer circuit is also integrated, generating two successive read pulses in one clock cycle for the multi-port memory. Another notable patent is a scheme for a static random access memory (SRAM). This structure includes a write driver circuit that drives both the true bitline side and the complement bitline side to power supply levels and ground. This design ensures that one side is driven to ground while the other is elevated to a high level before a precharge occurs below the power supply level.

Career Highlights

Hao Pu has worked with prominent companies in the technology sector, including Marvell Asia Pte., Ltd. and Globalfoundries U.S. Inc. His experience in these organizations has allowed him to refine his skills and contribute to cutting-edge memory technologies.

Collaborations

Hao Pu has collaborated with notable colleagues, including Xiaoli Hu and Wei Zhao. Their teamwork has fostered an environment of innovation and creativity in their projects.

Conclusion

Hao Pu's contributions to memory technology through his patents and career experiences highlight his role as a key innovator in the field. His work continues to influence advancements in high-performance memory systems.