Company Filing History:
Years Active: 2025
Title: Hao-Ping Yan: Innovator in Middle Voltage Transistor Technology
Introduction
Hao-Ping Yan is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in the development of middle voltage transistors. His innovative approach has led to advancements that are crucial for modern electronic devices.
Latest Patents
Hao-Ping Yan holds a patent for a "Middle Voltage Transistor and Fabricating Method of the Same." This patent outlines a detailed process for fabricating a middle voltage transistor, which includes several key steps. The method begins with providing a substrate and defining a gate predetermined region on it. A mask layer is then formed to cover part of this region, followed by a first ion implantation process to create lightly doping regions. After the mask layer is removed, a gate is formed to overlap the entire predetermined region. The process continues with the formation of additional doping regions and silicide layers, enhancing the transistor's performance.
Career Highlights
Hao-Ping Yan is associated with United Microelectronics Corporation, a leading company in the semiconductor industry. His work at this organization has allowed him to collaborate with other talented professionals and contribute to groundbreaking technologies.
Collaborations
Some of Hao-Ping Yan's coworkers include Wei-Hsuan Chang and Ming-Hua Tsai. Their collaborative efforts have likely played a role in the successful development of innovative semiconductor solutions.
Conclusion
Hao-Ping Yan's contributions to the field of middle voltage transistors exemplify the importance of innovation in technology. His patent and work at United Microelectronics Corporation highlight his role as a key player in advancing semiconductor technology.