Hsinchu, Taiwan

Hao-Heng Liu

USPTO Granted Patents = 4 

Average Co-Inventor Count = 2.4

ph-index = 1

Forward Citations = 2(Granted Patents)


Company Filing History:


Years Active: 2023-2025

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4 patents (USPTO):Explore Patents

Title: Hao-Heng Liu: Pioneering Innovations in Semiconductor Technology

Introduction:

Hao-Heng Liu, a visionary inventor based in Hsinchu, Taiwan, is a beacon of inspiration in the world of inventions. With a relentless pursuit of excellence and a passion for creating groundbreaking solutions, Liu's impact on the innovation landscape is profound, promising a lasting legacy for generations to come.

Latest Patents:

1. "Dielectric protection layer in middle-of-line interconnect structure manufacturing method": This patent discloses a method for manufacturing integrated chips, focusing on forming a transistor structure and implementing a selective etch and deposition process to create a dielectric protection layer.

2. "Semiconductor arrangement and method for making": This patent presents a method for fabricating semiconductor arrangements, involving the formation of dielectric and semiconductive layers to create advanced semiconductor structures.

Career Highlights:

A prominent figure in the field of semiconductor technology, Hao-Heng Liu currently contributes his expertise to Taiwan Semiconductor Manufacturing Company Ltd. (TSMC). His innovative spirit and dedication to pushing the boundaries of technological advancements have positioned him as a key player in the industry.

Collaborations:

Liu collaborates closely with esteemed colleagues such as Yi-Shan Chen and Kuan-Da Huang, leveraging their collective expertise to drive innovation and develop cutting-edge solutions in semiconductor manufacturing.

Conclusion:

Inventor Hao-Heng Liu's groundbreaking work in semiconductor technology exemplifies a commitment to excellence and a passion for transformative inventions. His unwavering dedication to pushing the boundaries of innovation ensures that his legacy will endure, inspiring future generations of inventors and revolutionizing the landscape of technological advancements.

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