The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 21, 2023
Filed:
Nov. 20, 2019
Applicant:
Taiwan Semiconductor Manufacturing Company Limited, Hsin-Chu, TW;
Inventors:
Yi-Shan Chen, Tainan, TW;
Hao-Heng Liu, Hsinchu, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED, Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0217 (2013.01); H01L 21/0332 (2013.01);
Abstract
A method for fabricating a semiconductor arrangement is provided. The method includes forming a first dielectric layer and forming a first semiconductive layer over the first dielectric layer. The first semiconductive layer is patterned to form a patterned first semiconductive layer. The first dielectric layer is patterned using the patterned first semiconductive layer to form a patterned first dielectric layer. A second semiconductive layer is formed over the patterned first dielectric layer and the patterned first semiconductive layer.