This inventor holds 1 USPTO granted patent. Top assignee: Zhong Shan Honson Electronic Technologies Limited. Active years: 2021.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2021
Title: Hao Feng - Innovator in Power Semiconductor Technology
Introduction
Hao Feng is a prominent inventor based in Zhongshan, China. He has made significant contributions to the field of power semiconductor devices, particularly through his innovative designs and manufacturing methods.
Latest Patents
Hao Feng holds 1 patent for an insulated gate bipolar transistor (IGBT) device and a method for manufacturing the same. This patent addresses the issue of wafer warping caused by trench stress during the IGBT manufacturing process. The technical solution involves optimizing the design of arrangement densities and arrangement regions of device trenches. This innovation not only alleviates the warping problem but also improves the product yield of IGBT chips and enhances their latch-up immunity, making them more robust and durable.
Career Highlights
Hao Feng is associated with Zhong Shan Honson Electronic Technologies Limited, where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the performance and reliability of power semiconductor devices.
Collaborations
Hao Feng collaborates with notable colleagues, including Johnny Kin On Sin and Song Yuan, who contribute to the innovative environment at Zhong Shan Honson Electronic Technologies Limited.
Conclusion
Hao Feng's contributions to the field of power semiconductor technology exemplify the impact of innovative thinking in engineering. His patent for the insulated gate bipolar transistor device showcases his commitment to enhancing device performance and reliability.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile