The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 03, 2021
Filed:
Dec. 17, 2019
Zhong Shan Honson Electronic Technologies Limited, Zhongshan, CN;
ZHONG SHAN HONSON ELECTRONIC TECHNOLOGIES LIMITED, Zhongshan, CN;
Abstract
An insulated gate bipolar transistor (IGBT) device and a method for manufacturing the same are provided. The present disclosure relates to power semiconductor devices. In order to relieve the problem of wafer warping caused by trench stress in an IGBT manufacturing process without affecting other performance parameters of the IGBT, it provides the following technical solution: optimizing the design of arrangement densities and arrangement regions of device trenches. The present disclosure can alleviate the problem of wafer warping caused by trench stress in the IGBT manufacturing process, improve the product yield of IGBT chips, and enhance the latch-up immunity of the IGBT, so that the IGBT is more robust and durable.