Hao Fang Fang

Title: Hao Fang Fang: Innovator in Flash Memory Technology

Introduction

Hao Fang Fang is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of flash memory technology, holding a total of 4 patents. His innovative work focuses on enhancing the reliability and efficiency of NAND flash memory devices.

Latest Patents

Hao Fang Fang's latest patents include methods for active boosting to minimize the capacitive coupling effect between adjacent gates of flash memory devices. His design incorporates a unique booster plate that is biased during read and program operations. This innovative approach reduces the voltage levels necessary to program and read the charge stored in the gates. Additionally, the booster plate shields against unwanted coupling between floating gates. The use of self boosting, local self boosting, and erase area self boosting modes with the unique booster plate further improves read/write reliability and accuracy. As a result, a more compact and reliable memory device can be realized according to his inventions.

Career Highlights

Throughout his career, Hao Fang Fang has worked with notable companies such as SanDisk Corporation and Grace Semiconductor Manufacturing Corporation. His experience in these organizations has contributed to his expertise in the field of semiconductor technology.

Collaborations

Hao Fang Fang has collaborated with talented individuals in the industry, including Tuan Duc Pham and Masaaki Higashitani. These collaborations have likely enriched his work and led to further advancements in flash memory technology.

Conclusion

Hao Fang Fang is a distinguished inventor whose work in flash memory technology has led to significant advancements in the field. His innovative patents and collaborations highlight his commitment to improving memory device reliability and efficiency.