The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2006
Filed:
Oct. 19, 2004
Jung-cheng Kao, Shanghai, CN;
Hao Fang, Shanghai, CN;
Jung-Cheng Kao, Shanghai, CN;
Hao Fang, Shanghai, CN;
Grace Semiconductor Manufacturing Corporation, Shanghai, CN;
Abstract
A method of forming poly insulator poly capacitors by using self-aligned salicide process for mixed mode analog devices. These capacitors are formed in the self-aligned salicide process as stacked poly insulator poly (PIP) capacitors. In the self-aligned salicide process, a self-aligned salicide block process is needed to protect the the salicide formation process from electrostatic discharge (ESD) devices such as resistors or capacitors. The oxide layer of the self-aligned salicide block is used as the dielectric layer of the capacitors to form the PIP capacitor. Therefore, some process steps are omitted due to the formation of the PIP capacitors.