Hanspeter P Hentzschel

Title: Hanspeter P. Hentzschel and Semiconductor Contact Innovation.

Introduction

Hanspeter P. Hentzschel is an inventor associated with Reutlingen, Germany, and Texas Instruments Corporation. His patent work addresses a key challenge in semiconductor manufacturing: creating low-resistance electrical contacts between metal and semiconductor materials.

Latest Patents

The supplied information identifies one patent for Hentzschel: “Metal-Semiconductor Ohmic Contacts and Methods of Fabrication.” The invention describes forming a thin, uniform insulating film between a semiconductor surface and a metal layer. Charges in the film induce an accumulation layer near the semiconductor surface, helping reduce contact resistance by making tunneling through the insulating layer the principal source of resistance.

The patent describes cleaning and activating an oxide-masked silicon wafer with argon ions, followed by oxygen-ion bombardment to form a silicon oxide layer approximately 20 angstroms thick. Subsequent metallization reportedly produced a specific contact resistance of about 5 × 10⁻⁷ ohm-cm² on silicon with a resistivity of 1.0 ohm-cm, without prior contact diffusion or later metal-semiconductor annealing. Hentzschel is credited with 1 patent in the information provided.

Career Highlights

Hentzschel’s documented contribution focuses on improving ohmic contacts for semiconductor devices. By addressing the Schottky-barrier resistance that can arise at a direct metal-semiconductor interface, the disclosed method offers an alternative approach to achieving lower-resistance contacts.

Collaborations

The patent lists Walter H. Schroen and Francois A. Padovani among Hentzschel’s coworkers. The supplied information also associates Hentzschel with Texas Instruments Corporation.

Conclusion

Hanspeter P. Hentzschel’s patent describes a thin-film technique for reducing resistance in metal-semiconductor contacts, reflecting a practical contribution to semiconductor fabrication.