Frankfurt-am-Main, Germany

Hans-Jörg Osten


Average Co-Inventor Count = 3.7

ph-index = 2

Forward Citations = 18(Granted Patents)


Location History:

  • Muellrose, DE (2006)
  • Frankfurt-am-Main, DE (2007)

Company Filing History:


Years Active: 2006-2007

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2 patents (USPTO):Explore Patents

Title: Innovations of Hans-Jörg Osten

Introduction

Hans-Jörg Osten is a notable inventor based in Frankfurt-am-Main, Germany. He has made significant contributions to the field of microelectronics, particularly in the development of advanced semiconductor technologies. With a total of 2 patents, Osten's work has had a considerable impact on the industry.

Latest Patents

Osten's latest patents include a method for producing an integrated circuit and a method of producing a metal silicide layer. The first invention relates to a method for the selective silicidation of contact areas, which facilitates the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. This involves depositing a metal oxide layer, such as praseodymium oxide, onto a prepared wafer, followed by a silicon layer and a structured cover layer. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere, the silicon layer and the metal oxide layer are converted to a metal silicide layer in lateral sections where the cover layer was previously removed.

The second patent pertains to a silicon-germanium hetero bipolar transistor that features a germanium concentration profile in the base layer. This transistor comprises a silicon collector layer, a boron-doped silicon-germanium base layer, a silicon emitter layer, and an emitter contact area. The fabrication process utilizes an epitaxy method on a pure silicon surface, incorporating an electrically inert material into the epitaxial layers to mitigate defects in the semiconductor structure and reduce dopant outdiffusion. This innovation allows for the creation of transistors suitable for high-frequency applications.

Career Highlights

Osten has worked with Ihp GmbH, an institution focused on innovations for high-performance microelectronics. His experience in this organization has allowed him to contribute to cutting-edge research and development in the semiconductor field.

Collaborations

Throughout his career, Osten has collaborated with notable colleagues such as Gunther Lippert and Bernd Heinemann. Their joint efforts have further advanced the innovations in microelectronics.

Conclusion

Hans-Jörg Osten's contributions to the field of microelectronics through his patents and collaborations highlight his role as a significant inventor. His work continues to influence the development of advanced semiconductor technologies.

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