The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 27, 2007
Filed:
May. 24, 2002
Elena Krüger, Legal Representative, Frankfurt, DE;
Andriy Goryachko, Frankfurt, DE;
Rainer Kurps, Frankfurt, DE;
Jing Ping Liu, Frankfurt, DE;
Hans-jörg Osten, Frankfurt, DE;
Elena Krüger, legal representative, Frankfurt, DE;
Andriy Goryachko, Frankfurt, DE;
Rainer Kurps, Frankfurt, DE;
Jing Ping Liu, Frankfurt, DE;
Hans-Jörg Osten, Frankfurt, DE;
Abstract
The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer () that contains for example praseodymium oxide is deposited onto a prepared wafer (). A silicon layer () and on top of said silicon layer a cover layer () is deposited onto the metal oxide layer (), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer () and the metal oxide layer () are converted to a metal silicide layer in lateral sections () in which the cover layer () was previously removed.