Ihp Gmbh-Innovations for High Performance Microelectronics/institut Fur Innovative Mikroelektronik

Ihp Gmbh - Innovations for High Performance Microelectronics/instut Fur Innovative Mikroelektronik

Hans-Jörg Osten

Bernd Heinemann

Gunther Lippert

Andriy Goryachko

Rainer Kurps

Elena Krüger, Legal Representative

Jing Ping Liu

The invention relates to a method for the selective silicidation of contact areas that allow the production of highly integrated circuits, preferably in a SMOS or BiCMOS process. To this end, a metal oxide layer () that contains for example praseodymium oxide is deposited onto a prepared wafer (). A silicon layer () and on top of said silicon layer a cover layer () is deposited onto the metal oxide layer (), said cover layer being laterally structured. In a subsequent tempering step in an oxygen-free, reducing gas atmosphere the silicon layer () and the metal oxide layer () are converted to a metal silicide layer in lateral sections () in which the cover layer () was previously removed.

Transistor, method for producing an integrated circuit and a method of producing a metal silicide layer

A silicon-germanium hetero bipolar transistor comprising a silicon collector layer, a boron-doped silicon-germanium base layer, a silicon emitter layer and an emitter contact area. The transistor is fabricated using an epitaxy process on a surface of pure silicon. An electrically inert material is incorporated into the epitaxial layers in order to link the defects in the semiconductor structure and to reduce the outdiffusion of the dopant. Thus, a transistor for high-frequency applications can be fabricated in two ways: to increase the dopant dose of the base region or to reduce the thickness of the base layer. In particular, the concentration profile of germanium in the base layer has a general shape of a triangle or trapezoid.

Silicon germanium hetero bipolar transistor having a germanium concentration profile in the base layer

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Frankfurt-am-Main, Germany

Hans-Jörg Osten