Wappingers Falls, NY, United States of America

Hans-Joerg Timme

This inventor holds 2 USPTO granted patents. Top assignees: International Business Machines Corporation, Kabushiki Kaisha Toshiba, Siemens Aktiengesellschaft. Active years: 1997.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans-Joerg Timme. Retrieved from https://idiyas.com/inventor/hans-joerg-timme-ghsy7nfl

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.4

ph-index = 2

Forward Citations = 96(Granted Patents)


Company Filing History:


Years Active: 1997

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2 patents (USPTO):Explore Patents

Title: Innovations of Hans-Joerg Timme

Introduction

Hans-Joerg Timme is a notable inventor based in Wappingers Falls, NY (US). He holds 2 patents that showcase his contributions to the field of semiconductor technology. His work has significantly impacted the efficiency and precision of temperature control in wafer processing.

Latest Patents

One of his latest patents is the "In-situ wafer temperature control apparatus for single wafer tools." This invention comprises a temperature control apparatus designed for single wafer etching tools. It includes a cathode electrode, an isolation layer, and chuck means that are vertically stacked to support a wafer during the etching process. A layer of thermoelectric elements is positioned between the isolation layer and the chuck means. This layer consists of a center area closed loop of connected Peltier elements and an outer area closed loop of connected Peltier elements. Each closed loop is coupled to a power source and is arranged to correspond to specific areas of the wafer, allowing for individual temperature control.

Another significant patent is the "In-situ temperature measurement using X-ray diffraction." This non-contact apparatus is designed for measuring the temperature of a single crystal substrate, such as a semiconductor wafer, using X-ray diffraction. By utilizing the Bragg condition for X-ray diffraction, the lattice constant of the semiconductor substrate can be determined. This is achieved either by measuring the diffraction angle for a monochromatic X-ray or by measuring the wavelength of an X-ray diffracted at a certain scattering angle. The lattice constant, which is a known function of temperature, is then converted into the temperature of the semiconductor substrate.

Career Highlights

Hans-Joerg Timme has worked with prominent companies in the technology sector, including IBM and Siemens Aktiengesellschaft. His experience in these organizations has contributed to his expertise in semiconductor technology and innovation.

Collaborations

Throughout his career, Timme has collaborated with notable professionals in the field, including Karl Paul Muller and Bernhard L Poschenriedes. These collaborations have further enriched his work and contributions to the industry.

Conclusion

Hans-Joerg Timme's innovations in temperature control and measurement for semiconductor wafers demonstrate his significant impact on the field. His patents reflect a commitment to advancing technology and improving processes in semiconductor manufacturing.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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