International Business Machines Corporation

Kabushiki Kaisha Toshiba

Siemens Aktiengesellschaft

Hans-Joerg Timme

Theodore Gerard Van Kessel

James Gardner Ryan

Katsuya Okumura

Karl Paul Muller

Gregory Brian Stephenson

Bernhard L Poschenriedes

Isahiro Hasegawa

A temperature control apparatus for single wafer etching tools comprising a cathode electrode, an isolation layer, and chuck means, respectfully, which are vertically stacked to support a wafer to be etched. A layer of thermoelectric elements is disposed between the isolation layer and the chuck means. The layer of thermoelectric elements comprises a center area closed loop of connected Peltier elements and an outer area closed loop of connected Peltier elements. The center area closed loop is coupled to a power source and is arranged to correspond to the center area of the wafer. The outer area closed loop is coupled to a power source and is arranged to correspond to the outer area of the wafer. Accordingly, the temperatures associated with each of the specific areas of the wafer are individually controlled by one of the closed loops.

In-situ wafer temperature control apparatus for single wafer tools

A non-contact in-situ temperature measurement apparatus for a single crystal substrate such as a semiconductor wafer using X-ray diffraction. Utilizing the Bragg condition for X-ray diffraction, the lattice constant of the semiconductor substrate can be determined either by measuring the diffraction angle for a monochromatic X-ray (monochromatic approach) or by measuring the wavelength of an X-ray diffracted with a certain scattering angle (polychromatic approach). The lattice constant, as a well-known function of temperature, is finally converted into the temperature of the semiconductor substrate.

In-situ temperature measurement using X-ray diffraction

Growing community of inventors

Wappingers Falls, NY, United States of America

Hans-Joerg Timme