Hans-Joachim L Gossman

Title: Innovations of Hans-Joachim L Gossman

Introduction

Hans-Joachim L Gossman is an accomplished inventor based in Summit, NJ (US). He has made significant contributions to the field of semiconductor technology. His innovative methods have the potential to enhance the performance of semiconductor devices.

Latest Patents

Gossman holds a patent titled "Method for enhancing tensile stress and source/drain activation using Si:C." This patent describes a method for enhancing tensile stress in the channel region of a semiconductor structure. The process involves a series of ion implantation steps at predetermined implant energies to implant carbon ions deep within the semiconductor structure, creating a strain layer. The strain layer is then annealed using a millisecond anneal process. Subsequent ion implantation steps are utilized to dope the source/drain region and the source/drain extension with phosphorus ions, ensuring that the doped regions remain above the strain layer. A second millisecond anneal step activates the source/drain region and the source/drain extension. This innovative strain layer enhances carrier mobility within the channel region while preventing the diffusion of phosphorus within the structure. Gossman has 1 patent to his name.

Career Highlights

Gossman is associated with Varian Semiconductor Equipment Associates, Inc., where he has been instrumental in advancing semiconductor technologies. His work has contributed to the development of more efficient and effective semiconductor devices.

Collaborations

Some of his notable coworkers include Helen L Maynard and Vikram Singh. Their collaborative efforts have furthered the research and development in the semiconductor field.

Conclusion

Hans-Joachim L Gossman is a notable inventor whose work in semiconductor technology has led to innovative methods that enhance device performance. His contributions continue to impact the industry positively.