Dresden, Germany

Hans-Georg Fröhlich

This inventor holds 2 USPTO granted patents. Top assignee: Infineon Technologies Ag. Active years: 2006.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hans-Georg Fröhlich. Retrieved from https://idiyas.com/inventor/hans-georg-fröhlich

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 9.6

ph-index = 1

Forward Citations = 5(Granted Patents)


Company Filing History:


Years Active: 2006

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2 patents (USPTO):Explore Patents

Title: Innovations by Hans-Georg Fröhlich

Introduction

Hans-Georg Fröhlich is a notable inventor based in Dresden, Germany. He has made significant contributions to the field of memory module fabrication, particularly in dynamic random access memory (DRAM) technology. With a total of 2 patents, his work has had a considerable impact on the industry.

Latest Patents

Fröhlich's latest patents include a method for fabricating a contact hole plane in a memory module. This method involves an arrangement of memory cells, each equipped with a selection transistor, and is crucial during the production of DRAM modules. Another patent focuses on a mark configuration for aligning and determining the relative position of multiple planes in relation to one another in a substrate. This innovation ensures that mark structures exhibit good contrast, regardless of design or process conditions.

Career Highlights

Hans-Georg Fröhlich is currently associated with Infineon Technologies AG, a leading company in semiconductor solutions. His expertise in memory technology has positioned him as a key player in the development of advanced memory systems.

Collaborations

Fröhlich has collaborated with notable colleagues, including Oliver Genz and Werner Graf. Their combined efforts have contributed to the advancement of memory technology and the successful implementation of innovative solutions.

Conclusion

Hans-Georg Fröhlich's contributions to the field of memory module fabrication and his innovative patents highlight his importance as an inventor in the technology sector. His work continues to influence the development of DRAM technology and its applications.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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