This inventor holds 2 USPTO granted patents and 1 published patent application. Top assignee: USA as Represented by Secretary of the Navy. Active years: 2026.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile
Company Filing History:
Years Active: 2026
Title: Innovations by Inventor Hannah N Masten
Introduction
Hannah N Masten is a prominent inventor based in Alexandria, VA (US). She has made significant contributions to the field of semiconductor technology, particularly in gallium oxide devices. With a total of 2 patents, her work showcases innovative approaches to improving device performance and thermal management.
Latest Patents
Hannah's latest patents include the "Gallium oxide planar MOS-Schottky rectifier" and the "Diamond-capped gallium oxide transistor." The first patent describes a GaO-based rectifier structure that combines a Schottky diode with a metal-oxide-semiconductor structure. This design features an n-type β-GaO drift layer on a β-GaO substrate, which incorporates semi-insulating regions created through in-situ ion implantation. This innovative structure achieves high forward bias current with low specific on-resistance and minimizes leakage current under reverse bias conditions. The second patent focuses on a method for growing nanocrystalline diamond (NCD) on GaO to enhance thermal management in GaO-based devices. A protective SiN interlayer is deposited on the GaO before the NCD layer is grown, ensuring the GaO is shielded from damage during the process. The presence of the NCD layer significantly improves the performance of the GaO-based device.
Career Highlights
Hannah N Masten currently works for the United States as represented by the Secretary of the Navy. Her role involves advancing research and development in semiconductor technologies, contributing to national defense and technological innovation.
Collaborations
Hannah has collaborated with notable colleagues, including Joseph A Spencer and Karl D Hobart. Their combined expertise has fostered advancements in the field of gallium oxide technology.
Conclusion
Hannah N Masten's innovative work in gallium oxide devices exemplifies her commitment to advancing semiconductor technology. Her patents reflect a deep understanding of material science and engineering, paving the way for future developments in the industry.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile