The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2026
Filed:
Apr. 28, 2023
The Government of the United States of America, As Represented BY the Secretary of the Navy, Arlington, VA (US);
Marko J. Tadjer, Vienna, VA (US);
Hannah N. Masten, Alexandria, VA (US);
Joseph A. Spencer, Springfield, VA (US);
Alan G. Jacobs, Rockville, MD (US);
Karl D. Hobart, Alexandria, VA (US);
Yuhao Zhang, Blacksburg, VA (US);
Abstract
GaO-based rectifier structure and method of forming the same. A Schottky diode structure is combined with a metal-oxide-semiconductor structure to provide a metal oxide-type Schottky barrier diode (MOSSBD) rectifier that includes an n-type β-GaOdrift layer on a β-GaOsubstrate, the drift layer having a plurality of spaced-apart semi-insulating regions formed by in-situ ion implantation of acceptor species at predefined spatially defined regions of the drift layer to create alternating areas of n-type and semi-insulating regions within the n-type drift layer. The thus-formed structure achieves high forward bias current with low specific on-resistance when the anode is biased with positive voltage and low leakage current when the device is operated under reverse bias.