Shamen, China

Hang Liu

This inventor holds 1 USPTO granted patent. Top assignee: United Semiconductor (Xiamen) Co., Ltd.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Hang Liu. Retrieved from https://idiyas.com/inventor/hang-liu-agfzvgvs

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


% Patents Active = 100.0

Average Co-Inventor Count = 7.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovations of Hang Liu

Introduction

Hang Liu is a notable inventor based in Shamen, China. He has made significant contributions to the field of semiconductor technology. His innovative work has led to the development of a unique semiconductor test key.

Latest Patents

Hang Liu holds a patent for a semiconductor test key that includes strip arranged resistor patterns. This invention provides a semiconductor test key on a substrate, which consists of a first resistor pattern, a second resistor pattern, and a third resistor pattern arranged in a strip. The distances between these patterns are carefully defined, with the second distance being larger than the first distance. This design enhances the functionality and efficiency of semiconductor testing.

Career Highlights

Hang Liu is currently employed at United Semiconductor (Xiamen) Co., Ltd. His work at this company has allowed him to focus on advancing semiconductor technologies. His patent reflects his expertise and commitment to innovation in this field.

Collaborations

Hang Liu collaborates with talented coworkers, including Guang Yang and Jinjian Ouyang. Their teamwork contributes to the success of their projects and the advancement of semiconductor technology.

Conclusion

Hang Liu's contributions to semiconductor technology through his innovative patent demonstrate his role as a key inventor in the industry. His work continues to influence advancements in this critical field.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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