Seoul, South Korea

Han Wool Jeong


Average Co-Inventor Count = 4.0

ph-index = 1

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2019

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2 patents (USPTO):Explore Patents

Title: The Innovations of Han Wool Jeong

Introduction

Han Wool Jeong is a prominent inventor based in Seoul, South Korea. He has made significant contributions to the field of static random access memory (SRAM) technology. With a total of two patents to his name, Jeong's work focuses on enhancing the performance and efficiency of memory systems.

Latest Patents

Jeong's latest patents include innovative designs for static random access memory. The first patent, titled "Static random access memory including assist circuit," discloses a SRAM that incorporates an assist circuit. This design features a bit cell part with at least one bit cell connected between two ground voltage nodes. The controller in this SRAM design utilizes multiple transistors to manage the ground voltages supplied to the bit cell part effectively.

The second patent, "Static random access memory cell capable of performing differential operation," presents an SRAM cell that can perform differential operations. This design includes a data node portion with four transistors forming first and second data nodes. Additionally, it features a data controller with pass-gate transistors that regulate data reading and writing, along with a control transistor that operates based on a driving voltage from a word line.

Career Highlights

Han Wool Jeong is affiliated with Yonsei University, where he continues to advance research in memory technology. His academic background and innovative spirit have positioned him as a key figure in the field of electronics.

Collaborations

Jeong has collaborated with notable colleagues, including Seong Ook Jung and Ju Hyun Park. Their combined expertise contributes to the ongoing development of cutting-edge memory solutions.

Conclusion

Han Wool Jeong's contributions to SRAM technology through his patents reflect his dedication to innovation in the field. His work not only enhances memory performance but also paves the way for future advancements in electronic systems.

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