Yonsei University

Han Wool Jeong

Seong Ook Jung

Ju Hyun Park

Tae Woo Oh

Se Hyuk Oh

Disclosed is a static random access memory including an assist circuit. More particularly, a static random access memory according to an embodiment of the present disclosure may include a bit cell part including at least one bit cell connected between a first ground voltage node and a second ground voltage node; and a controller including a first transistor configured to control connection between the first ground voltage node and the second ground voltage node, a second transistor configured to float a first ground voltage of the first ground voltage node, and a third transistor configured to float a second ground voltage of the second ground voltage node, wherein the controller controls the first and second ground voltages supplied to the bit cell part using the first, second, and third transistors.

Static random access memory including assist circuit

Disclosed is an SRAM cell capable of performing a differential operation. An SRAM cell according to an embodiment of the present disclosure may include a data node portion including four transistors constituting first and second data nodes; a data controller including first and second pass-gate transistors configured to control read and write of data in the first and second data nodes; and a control transistor connected to the data node portion through the second data node and configured to be controlled based on a driving voltage of a second word line having an opposite polarity to a first word line transmitting a driving voltage to the data controller.

Growing community of inventors

Seoul, South Korea

Han Wool Jeong