Hefei, China

Han-sih Ou

This inventor holds 1 USPTO granted patent and 1 published patent application. Top assignee: Changxin Memory Technologies, Inc.. Active years: 2026.

USPTO Granted Patents = 1 

Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: The Innovative Contributions of Han-sih Ou

Introduction

Han-sih Ou is a notable inventor based in Hefei, China. He has made significant contributions to the field of data storage technology. His innovative work has led to the development of a unique patent that enhances data storage efficiency.

Latest Patents

Han-sih Ou holds a patent for a "Data storage circuit and control method thereof, and storage apparatus." This invention relates to a data storage circuit that includes a first storage array and a sense amplifier array. The first storage array is positioned on a side of the sense amplifier array, which is electrically connected to a main bit line. The first storage array consists of multiple first sub storage arrays, each containing several first sub bit lines and first selector switches. The sense amplifier array is designed to amplify signals from the main bit line, thereby improving data retrieval processes.

Career Highlights

Han-sih Ou is currently employed at Changxin Memory Technologies, Inc. His work at this company focuses on advancing memory technology and enhancing data storage solutions. His innovative approach has positioned him as a key player in the industry.

Collaborations

Han-sih Ou has collaborated with several talented individuals in his field, including WeiBing Shang and Hongwen Li. These collaborations have fostered a creative environment that encourages innovation and the development of cutting-edge technologies.

Conclusion

Han-sih Ou's contributions to data storage technology exemplify the spirit of innovation. His patent and work at Changxin Memory Technologies, Inc. highlight his commitment to advancing the field. His collaborations further enhance the potential for future breakthroughs in technology.

Profile summary based on public USPTO records.
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