Han-Min Kim

Title: Innovations of Han-Min Kim in Semiconductor Technology

Introduction

Han-Min Kim is a notable inventor based in Yokkaichi, Japan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance and reliability of semiconductor devices through innovative structures and materials.

Latest Patents

Han-Min Kim holds a patent for an "Interconnect structure containing a metal silicide hydrogen diffusion barrier and method of making thereof." This patent describes a semiconductor structure that includes a semiconductor device located over a substrate. It features a dielectric layer stack composed of at least one first dielectric material layer, a silicon nitride layer, and at least one second dielectric material layer overlying the semiconductor device. The interconnect structures consist of metallic lines and metallic vias embedded within the dielectric layer stack. Notably, the interconnect structures include a metal silicide portion that directly contacts the silicon nitride layer. This combination provides a continuous hydrogen barrier structure that is vertically spaced from the top surface of the semiconductor device.

Career Highlights

Han-Min Kim is currently employed at SanDisk Technologies Inc., where he continues to innovate in the semiconductor field. His work has led to advancements that improve the efficiency and durability of semiconductor devices.

Collaborations

One of his notable collaborators is Yosuke Nosho, with whom he has worked on various projects related to semiconductor technology.

Conclusion

Han-Min Kim's contributions to semiconductor technology through his innovative patent demonstrate his expertise and commitment to advancing the field. His work continues to influence the development of more efficient and reliable semiconductor devices.