Han-Hsiu Chen

Title: The Innovations of Han-Hsiu Chen

Introduction

Han-Hsiu Chen is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of memory technology, particularly through his innovative work on resistive random access memory (RRAM). His expertise and dedication to advancing technology have led to the development of a unique patent that showcases his skills as an inventor.

Latest Patents

Han-Hsiu Chen holds a patent for a resistive random access memory and its manufacturing method. This patent describes an RRAM that includes an interlayer dielectric layer, a first bottom contact structure, and a second bottom contact structure formed on a substrate. A first memory cell is created on the first bottom contact structure, which includes a first bottom electrode layer with a first conductive region. The pattern of the first conductive region is vertically projected on the first bottom contact structure, forming a first projection pattern. Additionally, a second memory cell is formed on the second bottom contact structure, which includes a second bottom electrode layer with a second conductive region. The second projection pattern, which is different from the first, is vertically projected on the second bottom contact structure.

Career Highlights

Han-Hsiu Chen is currently employed at Winbond Electronics Corporation, where he continues to innovate in the field of memory technology. His work has been instrumental in advancing the capabilities of RRAM, making it a vital component in modern electronic devices.

Collaborations

Some of his notable coworkers include Meng-Hung Lin and Bo-Lun Wu, who have collaborated with him on various projects within the company.

Conclusion

Han-Hsiu Chen's contributions to the field of resistive random access memory exemplify his innovative spirit and dedication to technology. His patent reflects a significant advancement in memory technology, showcasing his expertise and commitment to pushing the boundaries of what is possible.